THE KINETICS OF SELF ION AMORPHIZATION OF SILICON

被引：20

作者：

GOLDBERG, RD

ELLIMAN, RG

WILLIAMS, JS

机构：

[1] RMIT,CTR MICROELECTR & MAT TECHNOL,MELBOURNE 3001,AUSTRALIA

[2] AUSTRALIAN NATL UNIV,RSPHYSSE,DEPT ELECTR MAT ENGN,CANBERRA,ACT 2601,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(93)96189-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In-situ time resolved reflectivity and Rutherford backscattering and channeling have been used to monitor damage buildup, amorphization and crystallization processes in self ion irradiated silicon at energies from 80 keV to 3 MeV. Particular attention is given to the regime where dynamic annealing during irradiation competes strongly with damage production. Results indicate that the ''kinetics'' of the amorphization process are described by an activation energy of 0.79+/-0.12 eV over the temperature range 20-120-degrees-C and that the same amorphization process controls both nucleation at end of range damage and layer-by-layer amorphization for self ion irradiation. However, it is difficult to ascribe the process to a particular controlling defect in the temperature range under study.

引用

页码：596 / 599

页数：4

共 5 条

[1]

ELLIMAN RG, 1988, MATER RES SOC S P, V100, P363

[2] DIVACANCY CONTROL OF THE BALANCE BETWEEN ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION AND AMORPHIZATION IN SILICON [J].