The temperature dependence of ion-beam-induced amorphization in beta-SiC

被引：87

作者：

Weber, WJ ^{[1
]}

Wang, LM ^{[1
]}

机构：

[1] UNIV NEW MEXICO, DEPT EARTH & PLANETARY SCI, ALBUQUERQUE, NM 87131 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00722-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ion-beam-induced crystalline-to-amorphous transition in monolithic beta-SiC has been studied as a function of irradiation temperature using the HVEM-Tandem Facility at Argonne National Laboratory. Specimens were irradiated with 1.5 MeV Xe+ ions over the temperature range from 40 to 550 K and the evolution of the amorphous state was followed in situ using the HVEM. At 40 K, the displacement dose for complete amorphization in P-SIC is 0.34 dpa and increases with temperature in two stages. The simultaneous recovery process associated with the high-temperature stage (above 200 K) has an activation energy of 0.097 +/- 0.019 eV. The critical temperature above which amorphization does not occur is 498 K under these irradiation conditions.

引用

页码：298 / 302

页数：5

共 14 条

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