THE RADIATION-INDUCED CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ZIRCON

被引:339
作者
WEBER, WJ [1 ]
EWING, RC [1 ]
WANG, LM [1 ]
机构
[1] UNIV NEW MEXICO, DEPT EARTH & PLANETARY SCI, ALBUQUERQUE, NM 87131 USA
关键词
D O I
10.1557/JMR.1994.0688
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comprehensive understanding of radiation effects in zircon, ZrSiO4, over a broad range of time scales (0.5 h to 570 million years) has been obtained by a study of natural zircon, Pu-doped zircon, and ion-beam irradiated zircon. Radiation damage in zircon results in the simultaneous accumulation of both point defects and amorphous regions. The amorphization process is consistent with models based on the multiple overlap of particle tracks, suggesting that amorphization occurs as a result of a critical defect concentration. The amorphization dose increases with temperature in two stages (below 300 K and above 473 K) and is nearly independent of the damage source (alpha-decay events or heavy-ion beams) at 300 K. Recrystallization of completely amorphous zircon occurs above 1300 K and is a two-step process that involves the initial formation of pseudo-cubic ZrO2.
引用
收藏
页码:688 / 698
页数:11
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