A MODIFICATION TO DEFECT ACCUMULATION MODELS OF AMORPHIZATION

被引：8

作者：

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

RADIATION EFFECTS LETTERS | 1983年 / 86卷 / 01期

关键词：

D O I：

10.1080/01422448308209669

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：25 / 28

页数：4

共 9 条

[1]

CARTER G, 1979, RAD EFF LETT, V43, P1

[2]

Carter G., 1976, ION IMPLANTATION SEM

[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[4] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[5]

JIMENEZRODRIGUE.JJ, 1983, UNPUB PHYS STAT SOL

[6] DISORDER PRODUCTION IN ION-IMPLANTED GALLIUM-ARSENIDE AT 40-K [J].

STEVANOVIC, DV ;

TOGNETTI, NP ;

CARTER, G ;

CHRISTODOULIDES, CE ;

IBRAHIM, AM ;

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 71 (1-2) :95-107

[7]

Swanson M.L., 1971, RAD EFFECTS SEMICOND, V1st ed., P359

[8] GLACIOLOGICAL INVESTIGATIONS OF THE TROPICAL QUELCCAYA ICE CAP, PERU [J].

THOMPSON, LG .

JOURNAL OF GLACIOLOGY, 1980, 25 (91) :69-84

[9] DIFFICULTIES IN DEDUCING DISORDERING MECHANISMS FROM EXPERIMENTAL STUDIES OF DISORDER-ION FLUENCE FUNCTIONS IN ION IRRADIATION OF SEMICONDUCTORS [J].

WEBB, R ;

CARTER, G .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4) :159-168

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