Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy

被引:31
作者
Lienau, C [1 ]
Richter, A
Behme, G
Suptitz, M
Heinrich, D
Elsaesser, T
Ramsteiner, M
Notzel, R
Ploog, KH
机构
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 04期
关键词
D O I
10.1103/PhysRevB.58.2045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The quasi-one-dimensional confinement potential and its influence on carrier transport in a GaAs quantum wire structure are directly mapped by low-temperature near-field scanning optical spectroscopy with subwavelength spatial resolution. Shallow asymmetric potential barriers in the vicinity of the quantum wire are detected, and their height and width are determined quantitatively: We demonstrate the strong influence of such local barriers on carrier transport and trapping into the quantum wire, suppressing carrier trapping at low temperature.
引用
收藏
页码:2045 / 2049
页数:5
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