Properties of ZnO nanotips selectively grown by MOCVD

被引：5

作者：

Chen, HH ^{[1
]}

Zhong, J ^{[1
]}

Saraf, G ^{[1
]}

Zhang, Z ^{[1
]}

Lu, YC ^{[1
]}

Fetter, LA ^{[1
]}

Pai, CS ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

NANOFABRICATION: TECHNOLOGIES, DEVICES AND APPLICATIONS | 2004年 / 5592卷

关键词：

ZnO nanotips; epitaxial film; MOCVD; selective growth;

D O I：

10.1117/12.571509

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the catalyst-free growth of ZnO nanotips by metalorganic chemical vapor deposition (MOCVD) on various substrates, including c-sapphire, (100) Si, titanium, glass and SiO2. Structural, optical, and electrical properties of ZnO nanotips are investigated. ZnO nanotips are found to be single crystalline and oriented along the c-axis normal to the growth plane. The nanotips exhibit dominant free excitonic transition and enhanced luminescence efficiency with negligible deep-level emission. Controllable in situ Ga doping during MOCVD growth reduces the resistivity of ZnO nanotips. Selective growth of ZnO nanotips has been achieved on patterned Ti/r-Al2O3, SiO2/r-Al2O3, and silicon-on-sapphire (SOS) substrates. It provides the potential to integrate ZnO nanotips and ZnO epitaxial films on a single patterned substrate for various-device applications.

引用

页码：164 / 169

页数：6

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