In situ catalytic growth of Al2O3 and Si nanowires

被引：58

作者：

Tang, CC ^{[1
]}

Fan, SS ^{[1
]}

Li, P ^{[1
]}

de la Chapelle, ML ^{[1
]}

Dang, HY ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 224卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

growth models; low dimensional structures; nanostructures; inorganic compounds; semiconducting aluminum compounds; semiconducting silicon;

D O I：

10.1016/S0022-0248(01)00852-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Al2O3 nanowires and Si nanowires with wrapping layers of amorphous Al2O3 have been synthesized by heating a mixture of Al, SiO2 and Fe2O3 catalyst supported on alumina at different temperatures. The results indicate the growth of the two nanowires competes against each other and depends on the reaction temperature. The addition of SiO2 is not essential for synthesizing Al2O3 nanowires. Al2O3 nanowires can be synthesized by directly heating Al with some catalysts when oxygen was introduced. In situ catalytic growth and silica-assisted effect are also discussed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：117 / 121

页数：5

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