100-K operation of Al-based single-electron transistors

被引：57

作者：

Nakamura, Y

Chen, CD

Tsai, JS

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 11A期

关键词：

single-electron transistor; high-temperature operation; shadow evaporation; anodization; periodic gate modulation;

D O I：

10.1143/JJAP.35.L1465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have made Al-based single-electron transistors with an artificially fabricated 20-nm island electrode by utilizing standard electron-beam lithography and three-angle shadow evaporation. A periodic gate-voltage dependence of current at above 100 K is demonstrated with this device. In addition, we increased the charging energy about 20% by using anodization.

引用

页码：L1465 / L1467

页数：3

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