Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

被引：125

作者：

Liscio, Andrea ^{[2
]}

Veronese, Giulio Paolo ^{[1
]}

Treossi, Emanuele ^{[2
]}

Suriano, Francesco ^{[1
]}

Rossella, Francesco ^{[3
,4
]}

Bellani, Vittorio ^{[3
,4
]}

Rizzoli, Rita ^{[1
]}

Samori, Paolo ^{[5
]}

Palermo, Vincenzo ^{[2
]}

机构：

[1] CNR, IMM, I-40129 Bologna, Italy

[2] CNR, ISOF, I-40129 Bologna, Italy

[3] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[4] Univ Pavia, CNISM, I-27100 Pavia, Italy

[5] Univ Strasbourg, Nanochem Lab, ISIS CNRS 7006, F-67000 Strasbourg, France

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 09期

关键词：

SOLUTION-PROCESSABLE GRAPHENE; QUANTITATIVE MEASUREMENT; NANOSCALE ARCHITECTURE; HIGH-MOBILITY; THIN-FILMS; OXIDE; TRANSPARENT; DEVICES; NANOSTRUCTURES; ELECTRONICS;

D O I：

10.1039/c0jm02940h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source-drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.

引用

页码：2924 / 2931

页数：8

共 59 条

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