Chemical mechanical planarization of copper: pH effect

被引:17
作者
Du, T [1 ]
Desai, V [1 ]
机构
[1] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32826 USA
关键词
D O I
10.1023/A:1026353028626
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of pH and H2O2 on the etching and polishing behavior of copper was studied. The copper surface morphology formed in pH 4 and 6 solution was observed. It was concluded that the chemical mechanical polishing removal rates and etch rates of copper in slurries with 5% H2O2 were found to vary with pH.
引用
收藏
页码:1623 / 1625
页数:3
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