Ion-assisted pulsed magnetron sputtering deposition of ta-C films

被引:34
作者
Bugaev, SP [1 ]
Podkovyrov, VG [1 ]
Oskomov, KV [1 ]
Smaykina, SV [1 ]
Sochugov, NS [1 ]
机构
[1] Russian Acad Sci, Inst High Current Elect, Siberian Div, Tomsk 634055, Russia
关键词
graphite; Raman scattering; sputtering;
D O I
10.1016/S0040-6090(01)00844-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The process of ion-assisted deposition of ta-C films by pulsed magnetron sputtering of a graphite target has been investigated. Probe measurements of the magnetron discharge plasma have been performed and its space- and time-dependent characteristics have been obtained as functions of the sputtering parameters and the bias voltage applied to the substrate. It has been shown that the density of the pulsed magnetron discharge plasma approaches values typical of pulsed laser or vacuum are cathode sputtering of graphite (10(17) - 10(18) m(-3)). Raman scattering was used to examine the ta-C films produced at both low and high pulsed bias voltages applied to the substrate (U-sub < 1 kV, tau = 160 s and 1 kV < U-sub < 6 kV, tau = 40 mus, respectively). It has been shown that in the first case the maximum content of diamond-like carbon in the coating (50-60%) is achieved at a lower energy per deposited carbon atom (E-C = 100-300 eV) than in the second one (40-50% at E-C = 1100-1200 eV). Despite the lower diamond-like phase content in the coatings produced at a high bias voltage, they show better adhesion to the substrate due to the ion mixing between the film and the substrate and between the film layers. The use of shorter bias pulses is also important to prevent breakdowns of the deposited dielectric ta-C film. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:16 / 26
页数:11
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