Large remanent polarization of vanadium-doped Bi4Ti3O12

被引：411

作者：

Noguchi, Y

Miyayama, M

机构：

[1] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 13期

关键词：

D O I：

10.1063/1.1357215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of vanadium doping on the ferroelectric properties of Bi4Ti3O12 were investigated using dense ceramics. The incorporation of vanadium resulted in a large remanent polarization (2P(r)) of over 40 muC/cm(2) without sacrificing other physical properties, and the polarization characteristics were shown to be superior to SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9. In addition, dense ceramics of vanadium-doped Bi4Ti3O12 could be obtained by sintering at temperatures 100-200 degreesC lower than those for the SrBi2Ta2O9 system. (C) 2001 American Institute of Physics.

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页码：1903 / 1905

页数：3

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