New low-temperature processing of metalorganic chemical vapor deposition-Bi4Ti3O12 thin films using BiOx buffer layer

被引:74
作者
Kijima, T [1 ]
Ushikubo, M [1 ]
Matsunaga, H [1 ]
机构
[1] SHARP Corp, Funct Devices Labs, Kashiwa, Chiba 277, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1A期
关键词
Bi4Ti3O12 thin film; BiOx buffer layer; solid-phase reaction; orientation control; strain relaxation;
D O I
10.1143/JJAP.38.127
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a new buffer layer structure to form Bi4Ti3O12 thin films using the metalorganic chemical vapor deposition (MOCVD) method at low temperature. We confirmed that the BiOx buffer layer effectively lowers the crystallization temperature and controls the composition of Bi4Ti3O12 thin films. We have succeeded in fabricating B4Ti3O12 films at 400 degrees C with good crystallinity and ferroelectric properties. Furthermore: we found that the film orientation is varied from the c-axis to the (117) preferred orientation with an increasing Bi/Ti composition ratio in thin films. The 120 nm-thick films fabricated at 400 degrees C showed a remanent polarization P-r of 1.9 mu C/cm(2) and a coercive field E-c of 55 kV/cm for the film with c-axis preferred orientation and 8.2 mu C/cm(2) and 90 kV/cm for the film with (117) preferred orientation, respectively.
引用
收藏
页码:127 / 130
页数:4
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