Photoelectrochemical properties of InGaN for H2 generation from aqueous water

被引：73

作者：

Fujii, K ^{[1
]}

Kusakabe, K ^{[1
]}

Ohkawa, K ^{[1
]}

机构：

[1] Tokyo Univ Sci, Nakamura Inhomogenous Crystal Project, Exploratory Res Adv Technol,Shinjyuku Ku, Japan Sci & Technol Agcy,Dept Appl Phys, Tokyo 1628601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

indium gallium nitride; semiconductor-electrolyte contacts; photoelectrochernical cells; photoelectrolysis; water splitting;

D O I：

10.1143/JJAP.44.7433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91 N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

引用

收藏

页码：7433 / 7435

页数：3

相关论文

共 13 条

[1] Excitonic emissions from hexagonal GaN epitaxial layers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786

[2] Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation [J].

Fujii, K ;

Karasawa, TK ;

Ohkawa, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19) :L543-L545

[3]

Grenko JA, 2004, MRS INTERNET J N S R, V9

[4] GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis [J].

Hirako, A ;

Yoshitani, M ;

Nishibayashi, M ;

Nishikawa, Y ;

Ohkawa, K .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :931-935

[5] Electrochemistry and photoetching of n-GaN [J].

Huygens, IM ;

Strubbe, K ;

Gomes, WP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) :1797-1802

[6] Photo-enhanced chemical wet etching of GaN [J].

Ko, CH ;

Su, YK ;

Chang, SJ ;

Lan, WH ;

Webb, J ;

Tu, MC ;

Cherng, YT .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 96 (01) :43-47

[7] Impurity doping effect on thermal stability of InGaN/GaN multiple quantum-well structures [J].

Kusakabe, K ;

Hara, T ;

Ohkawa, K .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)

[8] X-ray diffraction study of InGaN/GaN superlattice interfaces [J].

Kusakabe, K ;

Ohkawa, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1839-1843

[9] Physical chemistry of semiconductor-liquid interfaces [J].

Nozik, AJ ;

Memming, R .

JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) :13061-13078

[10]

Ohkawa K, 2001, PHYS STATUS SOLIDI A, V188, P621, DOI 10.1002/1521-396X(200112)188:2<621::AID-PSSA621>3.0.CO