Electrical and microstructural properties of SrTiO3 thin films deposited by metalorganic chemical vapor deposition

SrTiO3 thin films were deposited on Pt/SiO2/Si and RuO2/SiO2/Si substrates by low-pressure metalorganic cherhical vapor deposition(MOCVD) using Sr(DPM)(2) and Ti(i-O3H7)(4). The effects of deposition parameters on the growth behavior such as composition, crystallization and microstructure were investigated. With increasing the Sr(DPM)2 bubbler temperature from 205 degrees C to 220 degrees C, the cation concentration ratio of Sr/Ti increased from 0.8 to 2.3 and microstructure changed from round grains to hemispherical ones. The dielectric constant and dielectric loss of 50 nm thick SrTiO3 films deposited at 550 degrees C were 146 and 0.02-0.04, respectively. The leakage current density was 3.7 x 10(-7) A/cm(2) at 1 V.