Quantitative measurement of displacement and strain fields from HREM micrographs

被引:2402
作者
Hytch, MJ
Snoeck, E
Kilaas, R
机构
[1] CNRS, Ctr Etud Chim Met, F-94407 Vitry, France
[2] CNRS, CEMES, F-31055 Toulouse, France
[3] Univ Calif Berkeley, LBNL, NCEM, Berkeley, CA 94720 USA
关键词
high-resolution electron microscopy; strain fields;
D O I
10.1016/S0304-3991(98)00035-7
中图分类号
TH742 [显微镜];
学科分类号
摘要
A method for measuring and mapping displacement fields and strain fields from high-resolution electron microscope (HREM) images has been developed. The method is based upon centring a small aperture around a strong reflection in the Fourier transform of an HREM lattice image and performing an inverse Fourier transform. The phase component of the resulting complex image is shown to give information about local displacements of atomic planes and the two-dimensional displacement field can be derived by applying the method to two non-colinear Fourier components. Local strain components can be found by analysing the derivative of the displacement field. The details of the technique are outlined and applied to an experimental HREM image of a domain wall in ferroelectric-ferroelastic PbTiO3. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:131 / 146
页数:16
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