Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface

被引：27

作者：

Reaves, CM ^{[1
]}

Pelzel, RI ^{[1
]}

Hsueh, GC ^{[1
]}

Weinberg, WH ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECT STRUCT,DEPT CHEM ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 25期

关键词：

D O I：

10.1063/1.117135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The coherent Stranski-Krastanov growth mode is used to create selfassembled InP islands on GaInP/GaAs(311)A surfaces. The resulting islands on (311)A surfaces have a base width distribution peaked in the range of 600-500 Angstrom in contrast to a distribution peaked at 1200 Angstrom for islands on (100) surfaces, In addition on the (311)A surfaces, there is a bimodal island height distribution peaked at 15 and 50 Angstrom. For the (311)A surfaces, the islands are significantly smaller and more dense (similar to 10(10) islands/cm(2)) than the islands formed on (100) surfaces (similar to 10(9) islands/cm(2)). Despite these differences in the islands formed on the two surfaces, the growth occurs similarly for the two surfaces, with the formation of three different types of islands distinguished primarily by height. (C) 1996 American Institute of Physics.

引用

页码：3878 / 3880

页数：3

共 15 条

[1] NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].

AHOPELTO, J ;

YAMAGUCHI, AA ;

NISHI, K ;

USUI, A ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B) :L32-L35

[2] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].

ARAKAWA, Y ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899

[3] CHARACTERIZATION OF INP ISLANDS ON INGAP/GAAS(001) - EFFECT OF DEPOSITION TEMPERATURE [J].

BRESSLERHILL, V ;

REAVES, CM ;

VARMA, S ;

DENBAARS, SP ;

WEINBERG, WH .

SURFACE SCIENCE, 1995, 341 (1-2) :29-39

[4] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].

CARLSSON, N ;

SEIFERT, W ;

PETERSSON, A ;

CASTRILLO, P ;

PISTOL, ME ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095

[5] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[6] NANOSCALE INP ISLANDS EMBEDDED IN INGAP [J].

KURTENBACH, A ;

EBERL, K ;

SHITARA, T .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :361-363

[7] MOLECULAR-BEAM EPITAXY GROWTH OF QUANTUM DOTS FROM STRAINED COHERENT UNIFORM ISLANDS OF INGAAS ON GAAS [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

FAFARD, S ;

MERZ, JL ;

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1063-1066

[8] TUNABILITY OF ONE-DIMENSIONAL SELF-FACETING ON GAAS (311)A SURFACES BY METALORGANIC VAPOR-PHASE EPITAXY [J].

NOTZEL, R ;

TEMMYO, J ;

TAMAMURA, T .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3557-3559

[9] SELF-ORGANIZED GROWTH OF STRAINED INGAAS QUANTUM DISKS [J].

NOTZEL, R ;

TEMMYO, J ;

TAMAMURA, T .

NATURE, 1994, 369 (6476) :131-133

[10] MBE AND MOCVD GROWTH AND PROPERTIES OF SELF-ASSEMBLING QUANTUM-DOT ARRAYS IN III-V SEMICONDUCTOR STRUCTURES [J].

PETROFF, PM ;

DENBAARS, SP .

SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (01) :15-21

← 1 2 →