Indium-free violet LEDs grown by HVPE

被引：15

作者：

Usikov, AS ^{[1
]}

Tsvetkov, DV ^{[1
]}

Mastro, MA ^{[1
]}

Pechnikov, AI ^{[1
]}

Soukhoveev, VA ^{[1
]}

Shapovalova, YV ^{[1
]}

Kovalenkov, OV ^{[1
]}

Gainer, GH ^{[1
]}

Karpov, SY ^{[1
]}

Dmitriev, VA ^{[1
]}

O'Meara, B ^{[1
]}

Gurevich, SA ^{[1
]}

Arakcheeva, EM ^{[1
]}

Zakhgeim, AL ^{[1
]}

Helava, H ^{[1
]}

机构：

[1] TDI Inc, Silver Spring, MD 20904 USA

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303521

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on first demonstration of violet light emitting diodes (LED) based on AlGaN/GaN/AlGaN heterostructures grown by hydride vapor phase epitaxy (HVPE). The unique aspects of this technological approach are (i) growth of A1-containing epitaxial material by HVPE and (ii) use of HVPE to fabricate submicron multi-layer epitaxial structures. The LEDs provide light emission at the wavelength of 415-420 nm that did not shift with forward current. External efficiency up to 2.5% is reached at the current of 20 mA. The brightness of LED lamp is as high as 400-500 mcd. This suggests HVPE as an alternative technique for growing AlGaN-based LED structures. Results of the LED modeling and characterization are discussed. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2265 / 2269

页数：5

共 13 条

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