Buffer-facilitated epitaxial growth of ZnO nanowire

被引：63

作者：

Lin, YR ^{[1
]}

Tseng, YK

Yang, SS

Wu, ST

Hsu, CL

Chang, SJ

机构：

[1] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31040, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

来源：

CRYSTAL GROWTH & DESIGN | 2005年 / 5卷 / 02期

关键词：

D O I：

10.1021/cg049747h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.

引用

页码：579 / 583

页数：5

共 19 条

[1] Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst [J].

Gao, PX ;

Ding, Y ;

Wang, IL .

NANO LETTERS, 2003, 3 (09) :1315-1320

[2] Low-temperature wafer-scale production of ZnO nanowire arrays [J].

Greene, LE ;

Law, M ;

Goldberger, J ;

Kim, F ;

Johnson, JC ;

Zhang, YF ;

Saykally, RJ ;

Yang, PD .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034

[3] THIN-FILM PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TIN BARRIER FOR ULTRA-LARGE-SCALE INTEGRATION APPLICATIONS [J].

HEGDE, RI ;

FIORDALICE, RW ;

TRAVIS, EO ;

TOBIN, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1287-1296

[4] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[5] Ultrafast carrier dynamics in single ZnO nanowire and nanoribbon lasers [J].

Johnson, JC ;

Knutsen, KP ;

Yan, HQ ;

Law, M ;

Zhang, YF ;

Yang, PD ;

Saykally, RJ .

NANO LETTERS, 2004, 4 (02) :197-204

[6]

Kim Y, 2002, J KOREAN PHYS SOC, V41, P543

[7] Growth of aluminum nitride films at low temperature [J].

Lin, YR ;

Wu, ST .

JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) :433-439

[8] High-density, ordered ultraviolet light-emitting ZnO nanowire arrays [J].

Liu, CH ;

Zapien, JA ;

Yao, Y ;

Meng, XM ;

Lee, CS ;

Fan, SS ;

Lifshitz, Y ;

Lee, ST .

ADVANCED MATERIALS, 2003, 15 (10) :838-+

[9] Titanium and titanium nitride contacts to n-type gallium nitride [J].

Luther, BP ;

Mohney, SE ;

Jackson, TN .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (11) :1322-1327

[10] Single crystal nanowire vertical surround-gate field-effect transistor [J].

Ng, HT ;

Han, J ;

Yamada, T ;

Nguyen, P ;

Chen, YP ;

Meyyappan, M .

NANO LETTERS, 2004, 4 (07) :1247-1252

← 1 2 →