Static characteristics of piezoelectric thin film buckling actuator

被引：34

作者：

Wakabayashi, S

Sakata, M

Goto, H

Takeuchi, M

Yada, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

PZT; thin film; buckling; microactuator; piezoelectric coefficient; RF magnetron sputtering;

D O I：

10.1143/JJAP.35.5012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a diaphragm piezoelectric microactuator, The diaphragm consists of a Pb(Zr, Ti)O-3 (PZT) thin him, electrode layers, an isolation layer and a Si substrate, The diaphragm is deflected by transverse stress in the PZT thin Blm which is fabricated by a sputtering and annealing process, The PZT thin film has a piezoelectric coefficient d(31)-100 pC/N, which is comparable to that of bulk PZT. A diaphragm deflection of 3 mu m was obtained at an electric field of 16 V/mu m.

引用

页码：5012 / 5014

页数：3

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