Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

被引：55

作者：

Zhang, X

Rich, DH ^{[1
]}

Kobayashi, JT

Kobayashi, NP

Dapkus, PD

机构：

[1] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.121966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wills (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination, (C) 1998 American Institute of Physics. [S0003-6951(98)03936-9].

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页码：1430 / 1432

页数：3

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