The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target

被引：37

作者：

Li, XF ^{[1
]}

Miao, WN ^{[1
]}

Zhang, Q ^{[1
]}

Huang, L ^{[1
]}

Zhang, ZJ ^{[1
]}

Hua, ZY ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期

关键词：

D O I：

10.1088/0268-1242/20/8/033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance molybdenum-doped indium oxide (IMO) films were deposited on slide glass substrates from metallic targets by using dc reactive magnetron sputtering at room temperature. The structural, electrical and optical properties have been investigated as functions of target composition and oxygen partial pressure. The deposited films were smooth and amorphous, as determined by scanning electron microscopy and x-ray diffraction, respectively. The results revealed that the as-deposited molybdenum-doped In2O3 films show good electrical property and high optical transmittance, as well as high infrared transmittance. The films prepared at oxygen partial pressure of 3.8 x 10(-2) Pa and with 2 wt% Mo-doped target are characteristic of high Hall mobility of 20.2 cm(2) V-1 s(-1), carrier concentration of 5.2 x 10(20) cm(-3), and the average optical transmittance excess 90% in the visible region from 400 to 700 nm. Thus IMO films may be a potential material for novel optoelectrical devices such as an organic light-emitting diode.

引用

页码：823 / 828

页数：6

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