Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates

被引：7

作者：

Akasaka, T ^{[1
]}

Ando, S ^{[1
]}

Nishida, T ^{[1
]}

Saito, H ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.1394725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crack-free GaN films up to 11-mum-thick have been grown by using trenched SiC substrates and selective area metalorganic vapor phase epitaxy. These crack-free GaN films have hexagonal shapes and are surrounded by trenches. 97% of the hexagonal GaN films with side lengths of 100 mum and thickness of 11 mum was crack-free. The GaN films do not crack because the lateral propagation of cracks stops at the trenches and strain is relaxed in the small-area hexagonal GaN. This strain relaxation is confirmed by micro-Raman scattering measurements and agrees well with theoretical predictions. (C) 2001 American Institute of Physics.

引用

页码：1261 / 1263

页数：3

共 13 条

[1]

Akasaka T, 2000, IPAP CONFERENCE SER, V1, P864

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].