Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method

被引：16

作者：

Li, Y. W. ^{[1
]}

Hu, Z. G. ^{[1
]}

Sun, J. L. ^{[2
]}

Meng, X. J. ^{[2
]}

Chu, J. H. ^{[1
,2
]}

机构：

[1] E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2837534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaCu3Ti4O12 (CCTO) thin films are prepared by a sol-gel method on LaNiO3-coated silicon and Pt/TiO2/SiO2/Si substrate. Compared with the films on Pt, the CCTO on LaNiO3 exhibits a (400) orientation. Dielectric loss of CCTO on LaNiO3 is lower than 0.25 within 100 Hz-10 kHz, lower than the reported value of CCTO grown on Pt/TiO2/SiO2/Si by pulse laser deposition. Possible reason is that LaNiO3 acts as seed layer for the growth of CCTO. The crystallinity of CCTO is improved and the dielectric properties are enhanced. Complex impedance spectrum of CCTO on LaNiO3 is discussed according to grain boundary barrier layer capacitance model. (c) 2008 American Institute of Physics.

引用

页数：3

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