Charge transfer between epitaxial graphene and silicon carbide

被引：148

作者：

Kopylov, Sergey ^{[1
]}

Tzalenchuk, Alexander ^{[2
]}

Kubatkin, Sergey ^{[3
]}

Fal'ko, Vladimir I. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[3] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

charge exchange; electron density; epitaxial growth; graphene; monolayers; semiconductor doping; semiconductor epitaxial layers; silicon compounds; work function; BILAYER GRAPHENE; TRANSISTORS;

D O I：

10.1063/1.3487782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]

引用

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