Quantum oscillations and quantum Hall effect in epitaxial graphene

被引：151

作者：

Jobst, Johannes ^{[1
]}

Waldmann, Daniel ^{[1
]}

Speck, Florian ^{[2
]}

Hirner, Roland ^{[2
]}

Maude, Duncan K. ^{[3
]}

Seyller, Thomas ^{[2
]}

Weber, Heiko B. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91056 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91056 Erlangen, Germany

[3] Lab Champs Magnet Intenses, F-38042 Grenoble, France

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 19期

关键词：

BERRYS PHASE;

D O I：

10.1103/PhysRevB.81.195434

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

引用

页数：6

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