Dielectric properties of PbZrxTi1-xO3/PbZrO3 multilayer thin films

被引：11

作者：

Bae, SH ^{[1
]}

Jeon, KB

Jin, BM

机构：

[1] Dong A Univ, Dept Phys, Pusan 604714, South Korea

[2] Dong Eui Univ, Dept Phys, Pusan 614714, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2001年 / 36卷 / 11期

关键词：

thin films; sol-gel chemistry; X-ray diffraction; crystal structure;

D O I：

10.1016/S0025-5408(01)00699-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multilayered thin films of Perovskite structure were fabricated by the sol-gel method. The effects of various stacking and annealing sequences of PbZrO3/Pb(Zr,Ti)O-3 (PZ/PZT) multilayered thin films that were related to the structural and dielectric properties were investigated. The samples of PZ/annealing/PZT/annealing, PZT/annealing/PZ/annealing films have PZ and PZT structures together. But PZ/PZT/annealing, PZT/PZ/annealing films have mixed phases of PZ and PZT. PZ-based multilayered thin films have more antiferroelectric properties than that of PZT-based films. The results of X-ray, dielectric constants as a function of temperature, photographs of scanning electron microscope (SEM), and D-E hysteresis loop measurement were explained together. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1931 / 1937

页数：7

共 9 条

[1] Preferred orientation in PbZrO3 thin film prepared by sol-gel technique [J].