Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

被引：20

作者：

Oh, JH

Nakamura, K

Ono, K

Oshima, M

Hirashita, N

Niwa, M

Toriumi, A

Kakizaki, A

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] STARC, Minato Ku, Tokyo 1050004, Japan

[3] High Energy Accelerator Res Org, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2001年 / 114卷 / 114-116期

关键词：

si2p core level shift; oxygen adsorption; sub-oxide;

D O I：

10.1016/S0368-2048(00)00367-4

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The oxygen adsorption processes during the initial oxidation of Si(100) have been investigated by high-resolution photoemission spectroscopy of the Si2p core levels. The variation of the Si2p intensities was measured in detail for the different sub-oxide (Si1+, Si2+, Si3+, and Si4+) components. The oxygen adsorption processes at room temperature during the initial oxidation were quantitatively analyzed by measuring the intensity ratios of each sub-oxide component as a function of the oxidation time. It is found that the Si1+ and Si2+ species are localized mostly at the first interfacial layer, while the Si3+ and Si4+ components exist in the two-dimensional islands with certain height on the initial oxidation layer, and are expanded horizontally during further oxidation. Our results suggest that the two-dimensional island nucleation occurs during the initial oxidation. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：395 / 399

页数：5

共 15 条

[1] INITIAL-STAGE OF OXIDATION OF HYDROGEN-TERMINATED SI(100)-2X1 SURFACE [J].