High efficiency and high linearity InGaP/GaAs HBT power amplifiers: Matching techniques of source and load impedance to improve phase distortion and linearity

被引：24

作者：

Iwai, T ^{[1
]}

Ohara, S ^{[1
]}

Yamada, H ^{[1
]}

Yamaguchi, Y ^{[1
]}

Imanishi, K ^{[1
]}

Joshin, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 06期

关键词：

adjacent channel leakage power; linearity; phase distortion; power added efficiency; power amplifiers;

D O I：

10.1109/16.678510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a matching technique of the source and load impedance focused on a phase distortion of InGaP/GaAs HBT power amplifiers to simultaneously achieve a high efficiency and a high linearity performance. Load-pull measurements were done to maximize power added efficiency (PAE) and source pull measurements to minimize the phase distortion and adjacent channel leakage power (ACP, Our HBT exhibited a high PAE of 60.7% and an ACP at a 50 kHz offset frequency of -51 dBc for 1.5 GHz pi/4-shift QPSK modulated signal with an output power (P-out) of 31 dBm under a supply voltage of 3.5 V.

引用

页码：1196 / 1200

页数：5

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