Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs

被引：3

作者：

Ihn, B

Lee, J

Roh, TM

Kim, YS

Kim, B

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

[2] Hyundai Elect Ind Co Ltd, Mobile Telecommun Terminal Div, R&D Lab 2, Ichon 467701, Kyounggy Do, South Korea

[3] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Nam Ku, Pohang 790784, Kyungbuk, South Korea

[4] Pohang Univ Sci & Technol, Microwave Applicat Res Ctr, Nam Ku, Pohang 790784, Kyungbuk, South Korea

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 10期

关键词：

D O I：

10.1049/el:19980701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3 x 20 mu m(2), the surface recombination current-to-total base current ratio is similar to 0.47 at < 100MHz, and the ratio is decreased to zero at frequencies between 100MHz and 3GHz, clearly indicating that the current gain is dispersive.

引用

页码：1031 / 1033

页数：3

共 5 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].