High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate

被引：21

作者：

Han, M ^{[1
]}

Tanaka, M ^{[1
]}

Takeguchi, M ^{[1
]}

Zhang, Q ^{[1
]}

Furuya, K ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Nanocharacterizat Grp, Tsukuba, Ibaraki 3050003, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 255卷 / 1-2期

关键词：

interfaces; line defects; molecular beam epitaxy; semiconducting silicon compounds;

D O I：

10.1016/S0022-0248(03)01240-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Fe layer with thickness of 10 Angstrom was deposited on Si (111) 7 x 7 surface by molecular beam epitaxy (MBE) in an integrated ultrahigh vacuum (UHV) system. After annealing at 873 K, epitaxial beta-FeSi2 islands with single direction moire fringes were grown on Si substrate. In situ transmission electron microscopy (TEM) observation reveals that there is an epitaxial relationship between beta-FeSi2 and substrate, and epitaxial beta-FeSi2 islands are in strain state different from bulk beta-FeSi2 crystal. The beta-FeSi2/Si interface structure was characterized by in situ plan-viewed and ex situ cross-sectional high-resolution TEM (HRTEM) analyses. It is clear that the misfit dislocations exist at the beta-FeSi2/Si interface to accommodate the lattice parameters' mismatch. A model describing the beta-FeSi2/Si interface configuration has been established. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：93 / 101

页数：9

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