Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

被引：97

作者：

Ting, SM ^{[1
]}

Ramer, JC ^{[1
]}

Florescu, DI ^{[1
]}

Merai, VN ^{[1
]}

Albert, BE ^{[1
]}

Parekh, A ^{[1
]}

Lee, DS ^{[1
]}

Lu, D ^{[1
]}

Christini, DV ^{[1
]}

Liu, L ^{[1
]}

Armour, EA ^{[1
]}

机构：

[1] EMCORE Corp, Somerset, NJ 08873 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 03期

关键词：

D O I：

10.1063/1.1586972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphological evolution of InGaN/GaN multiple-quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been examined by atomic force microscopy and cross-sectional transmission electron microscopy. We have determined that GaN barrier growth at low temperature (similar to800degreesC) in a H-2-free environment results in a microstructure that consists of not only V-defects, but also inclusions embedded within V-defects that originate at the first InGaN-to-GaN growth interface. Propagation of the inclusions results in progressive deterioration of the surface morphology and reduced MQW thermal stability as quantum-well periods are added. Raising the GaN barrier growth temperature to 900degreesC or adding H-2 suppresses inclusion propagation entirely and preserves two-dimensional step-flow growth mode, resulting in superior morphology and higher thermal stability. (C) 2003 American Institute of Physics.

引用

页码：1461 / 1467

页数：7

共 35 条

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