Indium segregation in InGaN quantum-well structures

被引：113

作者：

Duxbury, N

Bangert, U

Dawson, P

Thrush, EJ

Van der Stricht, W

Jacobs, K

Moerman, I

机构：

[1] UMIST, Dept Phys, Manchester M60 1QD, Lancs, England

[2] Thomas Swan & Co Ltd, Sci Equipment Div, Unit Button End 1C, Cambridge CB2 5NX, England

[3] State Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis performed in a dedicated scanning transmission electron microscope. The In fluctuations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing. (C) 2000 American Institute of Physics. [S0003-6951(00)00911-6].

引用

页码：1600 / 1602

页数：3

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