Energy loss spectrum of AlN in the 6-120 eV region

被引：4

作者：

Guo, Q ^{[1
]}

Nishio, M

Ogawa, H

Yoshida, A

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 840, Japan

[2] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 441, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

AlN; single crystal; reflectance spectrum; energy loss spectrum; Kramers-Kronig analysis; synchrotron radiation;

D O I：

10.1016/S0022-0248(98)00330-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the energy loss spectrum of AlN determined from the reflectance spect um in the photon energy range from 6 to 120 eV by the Kramers-Kronig analysis. The prominent structure due to plasmons of valence electrons is observed in the energy loss spectrum at 20 eV, which has a good agreement with those obtained by other experimental techniques. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：457 / 460

页数：4

共 13 条

[1] OPTICAL PROPERTIES AND BAND STRUCTURE OF SRTIO3 AND BATIO3 [J].

CARDONA, M .

PHYSICAL REVIEW, 1965, 140 (2A) :A651-&

[2]

CHING WY, 1986, PHYS REV B, V34, P34

[3] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].

CHRISTENSEN, NE ;

GORCZYCA, I .

PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415

[4] ELECTRONIC-STRUCTURE OF AN AIN FILM PRODUCED BY ION-IMPLANTATION, STUDIED BY ELECTRON-SPECTROSCOPY [J].

GAUTIER, M ;

DURAUD, JP ;

LEGRESSUS, C .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :574-580

[5] Optical properties of aluminum nitride [J].

Guo, QX ;

Nishio, M ;

Ogawa, H ;

Yoshida, A .

PHYSICAL REVIEW B, 1997, 55 (24) :15987-15988

[6] ENERGY BAND STRUCTURE OF AIN [J].

HEJDA, B .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :407-&

[7] SEMIEMPIRICAL TIGHT-BINDING BAND STRUCTURES OF WURTZITE SEMICONDUCTORS - ALN, CDS, CDSE, ZNS, AND ZNO [J].

KOBAYASHI, A ;

SANKEY, OF ;

VOLZ, SM ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 28 (02) :935-945

[8] FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM [J].

LIESKE, N ;

HEZEL, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5806-5810

[9]

LOUGHIN S, 1994, PROPERTIES GROUP 3 N, P175

[10] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MORITA, M ;

UESUGI, N ;

ISOGAI, S ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23

← 1 2 →