A review of focused ion beam applications in microsystem technology

被引:507
作者
Reyntjens, S [1 ]
Puers, R [1 ]
机构
[1] Katholieke Univ Leuven, ESAT, MICAS, B-3001 Heverlee, Belgium
关键词
D O I
10.1088/0960-1317/11/4/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the possibilities of focused ion beam (FIB) applications in microsystem technology are reviewed. After an introduction to the technology and the operating principles of FIB, two classes of applications are described. First the subject of FIB for microsystem technology inspection, metrology and failure analysis is outlined. A procedure for cross sectioning on samples is presented, as well as some examples of how this technique can be applied to study processing results. The second part of the paper is on the use of FIB as a toot for maskless micromachining. Both subtractive (etching) and additive (deposition) techniques are discussed, as well as the combination of FIB implantation of silicon with subsequent wet etching. We will show the possibility to fabricate three-dimensional structures on a micrometre scale, and give examples of recent realizations thereof.
引用
收藏
页码:287 / 300
页数:14
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