A microaccelerometer structure fabricated in silicon-on-insulator using a focused ion beam process

被引：23

作者：

Daniel, JH ^{[1
]}

Moore, DF ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 73卷 / 03期

关键词：

micromachining; silicon-on-insulator; focused ion beam; tunnel readout; microswitch;

D O I：

10.1016/S0924-4247(98)00237-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Focused ion beam processing (FIB) has been employed for the fabrication of a microaccelerometer structure starting with bonded silicon-on-insulator substrates. A short FIB processing step involves cutting a narrow gap obliquely in a silicon beam. This gap is used for reading out an acceleration. The process time is less than 2 min which could be viable for the manufacture of high value sensors. SOI material is ideal to fabricate suspended structures with simple processing steps. A novel, so-called 'tapping mode' readout is studied. It is based on a periodic closing of the readout gap and a duty cycle measurement. Electron tunnelling readout is proposed for high sensitivity applications. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：201 / 209

页数：9

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