A new '2D to 3D' X-ray lithography technology for gray scale structures

被引:4
作者
Kudryashov, VA [1 ]
Lee, S
机构
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Dist, Russia
[2] Nanyang Technol Univ, NIE, EEE, Singapore 637616, Singapore
关键词
X-ray lithography; 3D structures; gray scale structures; UVIII; AZPN114;
D O I
10.1016/S0167-9317(01)00559-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new '2D to 3D' technology for gray scale structure production developed originally for e-beam lithography is successfully extended to X-ray lithography. A two-dimensional binary structure with a specially designed topology produced in a positive resist can be transformed into a three-dimensional binary structure by resist reflowing during baking at a temperature higher than the glassing temperature for this resist. Based on the binary nature of the lithography process, this technology demonstrates much higher process latitude and a possibility of resist structure formation with 20-40 different heights in a relatively thick resist layer. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:819 / 823
页数:5
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