X-ray lithography;
3D structures;
gray scale structures;
UVIII;
AZPN114;
D O I:
10.1016/S0167-9317(01)00559-7
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A new '2D to 3D' technology for gray scale structure production developed originally for e-beam lithography is successfully extended to X-ray lithography. A two-dimensional binary structure with a specially designed topology produced in a positive resist can be transformed into a three-dimensional binary structure by resist reflowing during baking at a temperature higher than the glassing temperature for this resist. Based on the binary nature of the lithography process, this technology demonstrates much higher process latitude and a possibility of resist structure formation with 20-40 different heights in a relatively thick resist layer. (C) 2001 Elsevier Science B.V. All rights reserved.