Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

被引：230

作者：

Svensson, C. Patrik T. ^{[1
]}

Martensson, Thomas ^{[1
,2
]}

Tragardh, Johanna ^{[2
]}

Larsson, Christina ^{[1
]}

Rask, Michael ^{[3
]}

Hessman, Dan ^{[2
]}

Samuelson, Lars ^{[2
]}

Ohlsson, Jonas ^{[1
]}

机构：

[1] Qunano AB, S-22370 Lund, Sweden

[2] Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

[3] Svedice AB, SE-17527 Jarfalla, Sweden

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 30期

关键词：

D O I：

10.1088/0957-4484/19/30/305201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.

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页数：6

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