Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

被引：20

作者：

Donetsky, DV ^{[1
]}

Belenky, GL

Garbuzov, DZ

Lee, H

Martinelli, RU

Taylor, G

Luryi, S

Connolly, JC

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 04期

关键词：

D O I：

10.1049/el:19990242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.

引用

页码：298 / 299

页数：2

共 5 条

[1] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS [J].