Synthesis of silicon nanotubes on porous alumina using molecular beam epitaxy

被引：165

作者：

Jeong, SY

Kim, JY

Yang, HD

Yoon, BN

Choi, SH

Kang, HK

Yang, CW

Lee, YH ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Inst Basic Sci, Dept Phys, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, CNNC, Dept Adv Mat Engn, Suwon 440746, South Korea

[3] Chonbuk Natl Univ, SPRC, Jeonju 561756, South Korea

[4] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[5] Kyung Hee Univ, Coll Elect & Informat, Suwon 449710, South Korea

[6] Kyung Hee Univ, Inst Nat Sci, Suwon 449710, South Korea

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 14期

关键词：

D O I：

10.1002/adma.200304898

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanotubes (SiNTs) have been grown on a porous alumina surface, without the assistance of catalysts, by molecular beam epitaxy (MBE). The flow rate of Si atoms and the corrugated porous alumina surface seem to play an important role in the continuous growth of Si tubular structures. The Figure shows a field-emission scanning electron microscopy image of the SiNTs grown on a regular array of hexagonal porous alumina.

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页码：1172 / +

页数：6

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