Fullerene-structured nanowires of silicon

被引:158
作者
Marsen, B [1 ]
Sattler, K [1 ]
机构
[1] Univ Hawaii, Dept Phys & Astron, Honolulu, HI 96822 USA
关键词
D O I
10.1103/PhysRevB.60.11593
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon vapor from a magnetron sputter source was deposited onto highly oriented pyrolytic graphite, resulting in the formation of nanoscale wires. The structures were analyzed by scanning tunneling microscopy. The wires are from 3 to 7 nm in diameter and at least 100 nm long. They tend to be assembled parallel in bundles. In order to understand the observed quasi-one-dimensional structures, diamondlike and fullerenelike wire models are constructed. Molecular-orbit calculations yield binding energies and band gaps of such structures, and lead us to propose a fullerene-type Si-24-based atomic configuration for nanowires of silicon. [S0163-1829(99)02740-X].
引用
收藏
页码:11593 / 11600
页数:8
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