Crystal growth of Cu(In1-xGax)3Se5 by horizontal Bridgman method

被引：20

作者：

Wang, HP ^{[1
]}

Lam, WW ^{[1
]}

Shih, I ^{[1
]}

机构：

[1] McGill Univ, Dept Elect Engn, Montreal, PQ H3A 2A7, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 200卷 / 1-2期

基金：

加拿大自然科学与工程研究理事会;

关键词：

single crystals; Bridgman method; lattice constants; defect chalcopyrite;

D O I：

10.1016/S0022-0248(98)01300-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystalline Cu(In1-xGax)(3)Se-5 ingots were grown by horizontal Bridgman method. Closed quartz ampoules were used to avoid the loss of selenium. Ampoules partially coated with carbon were used to prevent sticking of the melt. The composition variations along as-grown ingots were studied as a function of starting Ga content by Electron Probe Microscope Analysis (EPMA). X-ray powder diffraction (XRD) measurements were carried out to examine the lattice structure and lattice constants. Hall effect measurements were also carried out to determine electrical properties. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 142

页数：6

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