High dose MeV oxygen ion implantation into SiC

被引：19

作者：

Wesch, W

Heft, A

Hobert, H

Peiter, G

Wendler, E

Bachmann, T

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Friedrich Schiller Univ, Inst Phys Chem, D-07743 Jena, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

wave guides; SiC; ion implantation;

D O I：

10.1016/S0168-583X(98)00184-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

By high-dose MeV oxygen implantation into 6H-SiC bulk crystals at temperatures between 650 degrees C and 700 degrees C buried SiC-SiOx layers were produced. In the infrared and visible region these layers exhibit a refractive index which is significantly reduced with respect to the virgin SIC making them useable as cladding layers for SIC waveguides. For the first time waveguiding at lambda = 633 nm was demonstrated after annealing such an ion implanted SiC-SiO, layer system. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：160 / 163

页数：4

共 13 条

[1] RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide [J].