RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

被引：45

作者：

Barradas, NP ^{[1
]}

Jeynes, C ^{[1
]}

Jackson, SM ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 136卷

关键词：

RBS; simulated annealing; cubic silicon carbide; buried silicon oxide; plural scattering; multiple scattering;

D O I：

10.1016/S0168-583X(97)00686-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Oxygen was implanted into cubic (3C) silicon carbide in order to produce a buried insulating layer. Doses between 1 x 10(17) and 1.4 x 10(18) cm(-2) were used, with an implantation energy of 200 keV and at temperatures from 180 degrees C to 600 degrees C. The samples were analysed with Rutherford backscattering. The resulting spectra are complex, with the layered profiles of C, O and Si overlapping extensively. The combinatorial optimisation simulated annealing algorithm was used to analyse the data. The only input required is what are the elements present in the sample, without any further human intervention. A multiple scattering correction is done. The individual depth profiles for each element are obtained, and it is shown that stoichiometric SiO2 at the peak of the oxygen concentration is formed, depending on the implantation conditions. (C) 1998 Elsevier Science B.V.

引用

页码：1168 / 1171

页数：4

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