Damage production and annealing of ion implanted silicon carbide

被引：45

作者：

Heft, A ^{[1
]}

Wendler, E ^{[1
]}

Heindl, J ^{[1
]}

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Strunk, HP ^{[1
]}

Wesch, W ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSEN MIKROCHARAKTERISIERUNG,D-91058 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01304-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Samples of 6H-SiC were implanted with Ga+ and Sb+ ions in a wide dose range (10(13) to 10(16) cm(-2)) at various target temperatures (-190 degrees C to 1200 degrees C). Short-time annealing was performed at temperatures from 600 degrees C to 1750 degrees C. The as-implanted and annealed samples were analyzed by means of the RBS-channeling technique, XTEM and optical measurements. The results show that amorphization can be prevented for implantation temperatures greater than or equal to 300 degrees C; from 500 degrees C to 800 degrees C minimum damage concentrations are obtained. Annealing of amorphous layers is quite difficult and non-perfect, no monocrystalline state was found up to temperatures of 1720 degrees C. Weakly damaged layers produced by a low dose (< 1 X 10(14) cm(-2)) at room temperature regrow perfectly at 1200 degrees C. Residual damage after high-dose implantation (greater than or equal to 1 X 10(15) cm(-2)) at elevated temperatures cannot be removed completely by annealing.

引用

页码：239 / 243

页数：5

共 12 条

[1] CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE [J].

DAVIS, RF ;

SITAR, Z ;

WILLIAMS, BE ;

KONG, HS ;

KIM, HJ ;

PALMOUR, JW ;

EDMOND, JA ;

RYU, J ;

GLASS, JT ;

CARTER, CH .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01) :77-104

[2] AXIAL DECHANNELING .2. POINT-DEFECTS [J].

GARTNER, K ;

HEHL, K ;

SCHLOTZHAUER, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) :55-62

[3] AXIAL DECHANNELING .1. PERFECT CRYSTAL [J].

GARTNER, K ;

HEHL, K ;

SCHLOTZHAUER, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 216 (1-2) :275-286

[4] COMPARATIVE-STUDY OF IMPLANTATION-INDUCED DAMAGE IN GAAS AND GE - TEMPERATURE AND FLUX DEPENDENCE [J].

HAYNES, TE ;

HOLLAND, OW .

APPLIED PHYSICS LETTERS, 1991, 59 (04) :452-454

[5] AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION [J].

HEERA, V ;

STOEMENOS, J ;

KOGLER, R ;

SKORUPA, W .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :2999-3009

[6] ION-IMPLANTATION EFFECTS IN SILICON-CARBIDE [J].

MCHARGUE, CJ ;

WILLIAMS, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :889-894

[7]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[8]

SHINATANI N, 1994, NUCL INSTRUM METH B, V91, P529

[9] Investigation of radiation damage in ion implanted and annealed SiC layers [J].

Wesch, W ;

Heft, A ;

Heindl, J ;

Strunk, HP ;

Bachmann, T ;

Glaser, E ;

Wendler, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :339-345

[10] HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE [J].

WESCH, W ;

HEFT, A ;

WENDLER, E ;

BACHMANN, T ;

GLASER, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :335-338

← 1 2 →