Investigation of radiation damage in ion implanted and annealed SiC layers

被引：31

作者：

Wesch, W ^{[1
]}

Heft, A ^{[1
]}

Heindl, J ^{[1
]}

Strunk, HP ^{[1
]}

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Wendler, E ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG, INST WERKSTOFFWISSENSCH MIKROCHARAKTERISIERUNG, D-91058 ERLANGEN, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(96)80027-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The damage production and annealing of 6H-SiC implanted with Ga+ and Sb+ in the temperature region 80-1473 K are investigated by means of the RBS/channelling technique and TEM analysis. For implantation temperatures T-I less than or equal to 473 K amorphous layers are produced at doses ranging between 1 x 10(14) and 3 x 10(14) cm(-2). For T-I greater than or equal to 573 K non-amorphous damaged layers are created consisting of a nearly perfect crystalline thin surface layer and a broad damage band the structure of which depends on the implantation temperature. The annealing results indicate that amorphous layers can hardly be sufficiently annealed by RTA for temperatures up to T-a = 2000 K, whereas weakly damaged layers can be more easily annealed.

引用

页码：339 / 345

页数：7

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