Exploring atomic defects in molybdenum disulphide monolayers

被引：1299

作者：

Hong, Jinhua ^{[1
]}

Hu, Zhixin ^{[2
]}

Probert, Matt ^{[3
]}

Li, Kun ^{[4
]}

Lv, Danhui ^{[1
]}

Yang, Xinan ^{[5
]}

Gu, Lin ^{[5
]}

Mao, Nannan ^{[6
,7
]}

Feng, Qingliang ^{[6
]}

Xie, Liming ^{[6
]}

Zhang, Jin

Wu, Dianzhong ^{[8
,9
]}

Zhang, Zhiyong ^{[8
,9
]}

Jin, Chuanhong ^{[1
]}

Ji, Wei ^{[2
,10
]}

Zhang, Xixiang ^{[4
]}

Yuan, Jun ^{[1
,3
]}

Zhang, Ze ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China

[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[4] KAUST, Imaging & Characterizat Core Lab, Adv Nanofabricat, Thuwal 239955, Saudi Arabia

[5] Chinese Acad Sci, Collaborat Innovat Ctr Quantum Matter, Inst Phys, Beijing 100190, Peoples R China

[6] Chinese Acad Sci, Key Lab Standardizat & Measurement Nanotechnol, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

[7] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Key Lab Phys & Chem Nanodevices,Cte Nanochem, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, Beijing 100871, Peoples R China

[8] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[9] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[10] Shanghai Jiao Tong Univ, Collaborat Innovat Ctr Adv Microstruct, Dept Phys & Astron, Shanghai 200240, Peoples R China

来源：

NATURE COMMUNICATIONS | 2015年 / 6卷

基金：

美国国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; LARGE-AREA; TRANSPORT-PROPERTIES; VALLEY POLARIZATION; MOS2; MONOLAYERS; HIGH-QUALITY; MOBILITY; GROWTH; GRAPHENE; LAYERS;

D O I：

10.1038/ncomms7293

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 x 10(13) cm(-2) is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

引用

页数：8

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