Electrical transport properties and field effect transistors of carbon nanotubes

被引:145
作者
Dai, Hongjie [1 ]
Javey, Ali
Pop, Eric
Mann, David
Kim, Woong
Lu, Yuerui
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
carbon nanotubes; FETs; ballistic transport; phonon scattering; thermal transport; contacts;
D O I
10.1142/S1793292006000070
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-kappa gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon-carbon bonding con. guration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-kappa gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.
引用
收藏
页码:1 / 13
页数:13
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