Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces

被引：23

作者：

Cirlin, GE ^{[1
]}

Petrov, VN ^{[1
]}

Golubok, AO ^{[1
]}

Tipissev, SY ^{[1
]}

Dubrovskii, VG ^{[1
]}

Guryanov, GM ^{[1
]}

Ledentsov, NN ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

基金：

俄罗斯基础研究基金会;

关键词：

gallium arsenide; indium arsenide; molecular beam epitaxy; scanning tunneling microscopy; self assembly; surface structure; morphology; roughness and topography; vicinal single crystal surfaces;

D O I：

10.1016/S0039-6028(96)01517-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunneling microscopy we have studied the influence of initial stage (up to 1.5 monolayers) growth kinetics on the surface morphology of 3 ML InAs/GaAs(100) grown on vicinal surfaces (misoriented by 3 degrees and 7 degrees towards [011] direction) by different modifications of molecular beam epitaxy. The results presented clearly show the influence of growth kinetics on the arrangement of InAs/GaAs quantum dot arrays on vicinal surfaces.

引用

页码：895 / 898

页数：4

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