Optical and structural properties of SiC layers grown by an electron cyclotron resonance CVD technique

被引：5

作者：

Giorgis, F

Chiodoni, A

Cicero, G

Ferrero, S

Mandracci, P

Barucca, G

Reitano, R

Musumeci, P

机构：

[1] Politecn Torino, INFM, I-10129 Turin, Italy

[2] Dept Phys, I-10129 Turin, Italy

[3] Dept Elect, I-10129 Turin, Italy

[4] Univ Ancona, INFM, I-60131 Ancona, Italy

[5] Dept Mat Sci, I-60131 Ancona, Italy

[6] Univ Catania, INFM, Catania, Italy

[7] Dept Phys, Catania, Italy

来源：

关键词：

3C-SiC/Si; X-ray diffraction (XRD); micro-Raman spectroscopy; photo-luminescence;

D O I：

10.1016/S0925-9635(00)00528-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers, The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Angstrom were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure. (C) 2901 Elsevier Science B.V. All rights reserved.

引用

页码：1264 / 1267

页数：4

共 12 条

[1] Deposition of polycrystalline beta-SiC films on Si substrates at room temperature [J].